PVD- Treated ALD TaN for Cu Interconnect Extension to 5nm Node and Beyond-Reference-Cited by-同舟云学术

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PVD- Treated ALD TaN for Cu Interconnect Extension to 5nm Node and Beyond

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Interconnect Technology Conference (IITC)
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Author:

Wu Zhiyuan,Li Rui,Xie Xiangjin,Suen Wesley,Tseng Jennifer,Bekiaris Nikos,Vinnakota Ramkumar,Kashefizadeh Keyvan,Naik Mehul

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8411791/8430288/08430433.pdf?arnumber=8430433

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing Ultrathin Wafer-Scale WS₂ as a Diffusion Barrier for Cu Interconnects;ACS Applied Electronic Materials;2023-09-05

2. Reinforcement in electromigration reliability of Cu interconnects by alloying of extremely dilute MnO;Journal of Alloys and Compounds;2023-08

3. Recent Trends in Copper Metallization;Electronics;2022-09-14

4. Galvanic Corrosion Effect of Co Liner on ALD TaN Barrier;2022 IEEE International Interconnect Technology Conference (IITC);2022-06-27

5. Large‐Area Uniform 1‐nm‐Level Amorphous Carbon Layers from 3D Conformal Polymer Brushes. A “Next‐Generation” Cu Diffusion Barrier?;Advanced Materials;2022-02-25

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