Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode-Reference-Cited by-同舟云学术

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Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode

Published:2017-11 Issue:11 Volume:53 Page:1-4
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Shirotori S.^ORCID,Yoda H.,Ohsawa Y.,Shimomura N.,Inokuchi T.,Kato Y.,Kamiguchi Y.,Koi K.,Ikegami K.,Sugiyama H.,Shimizu M.,Altansargai B.,Oikawa S.,Ishikawa M.,Tiwari A.,Saito Y.,Kurobe A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/8082142/07894271.pdf?arnumber=7894271

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Functional Design for Memory and Strong Physical Unclonable Functions Based on NAND-Like SOT Arrays;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM);IEEE Transactions on Magnetics;2023-03

3. Emerging non-CMOS devices and technologies;Nanoelectronics : Physics, Materials and Devices;2023

4. Spin-orbit torque switching of magnetic tunnel junctions for memory applications;Journal of Magnetism and Magnetic Materials;2022-11

5. Proposal & Demonstration of Low Current SOT-MRAM based on Brand New Mechanism for Retention Energy of Strain-Induced Magnetic Anisotropy;2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA);2022-04-18

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