Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)-Reference-Cited by-同舟云学术

Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

Published:2023-03 Issue:3 Volume:59 Page:1-6
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Hwang William¹^ORCID,Xue Fen¹,Zhang Fan²^ORCID,Song Ming-Yuan³,Lee Chien-Min³,Turgut Emrah³,Chen T. C.³,Bao Xinyu³,Tsai Wilman⁴,Fan Deliang²^ORCID,Wang Shan X.¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, USA

3. Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan

4. Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA

Funder

Taiwan Semiconductor Manufacturing Company under University Joint Development Program

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/20/10053568/9968274-aam.pdf

Reference33 articles.

1. A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory

2. Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

3. Basic principles of STT-MRAM cell operation in memory arrays

4. The design and verification of MuMax3

5. Deep Residual Learning for Image Recognition

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5. High-Density Spin–Orbit Torque Magnetic Random Access Memory With Voltage-Controlled Magnetic Anisotropy/Spin-Transfer Torque Assist;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2022-12