Multi-Functional Design for Memory and Strong Physical Unclonable Functions Based on NAND-Like SOT Arrays
Author:
Affiliation:
1. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China,100191
2. Beijing Microelectronics Technology Institute,Beijing,China,100076
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10628446/10628545/10628850.pdf?arnumber=10628850
Reference16 articles.
1. A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices
2. Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array
3. Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices
4. A Novel FeFET Array-Based PUF: Co-optimization of Entropy Source and CRP Generation for Enhanced Robustness in IoT Security
5. Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
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