A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://www.nature.com/articles/s41928-023-00994-0.pdf
Reference49 articles.
1. Chou, C.-C. et al. A 22nm 96KX144 RRAM macro with a self-tracking reference and a low ripple charge pump to achieve a configurable read window and a wide operating voltage range. In 2020 IEEE Symposium on VLSI Circuits 1–2 (IEEE, 2020).
2. Chih, Y. et al. A 22nm 32Mb embedded STT-MRAM with 10ns read speed, 1M cycle write endurance, 10 years retention at 150 °C and high immunity to magnetic field interference. In 2020 IEEE International Solid-State Circuits Conference—(ISSCC) 222–224 (IEEE, 2020).
3. Chang, T. et al. A 22nm 1Mb 1024b-read and near-memory-computing dual-mode STT-MRAM macro with 42.6GB/s read bandwidth for security-aware mobile devices. In 2020 IEEE International Solid-State Circuits Conference—(ISSCC) 224–226 (IEEE, 2020).
4. Chiu, Y.-C. et al. A 40 nm 2 Mb ReRAM macro with 85% reduction in FORMING time and 99% reduction in page-write time using auto-FORMING and auto-write schemes. In Symposium on VLSI Technology T232–T233 (IEEE, 2019).
5. Jain, P. et al. A 3.6 Mb 10.1 Mb/mm2 embedded non-volatile ReRAM macro in 22 nm FinFET technology with adaptive forming/set/reset schemes yielding down to 0.5 V with sensing time of 5 ns at 0.7 V. In IEEE International Solid-State Circuits Conference (ISSCC) Digest of Technical Papers 212–214 (IEEE, 2019).
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing;Small Science;2024-01-22
2. Spin-based magnetic random-access memory for high-performance computing;National Science Review;2023-10-25
3. Secure computing with MRAM;Nature Electronics;2023-07-13
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