A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers-Reference-Cited by-同舟云学术

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A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

Published:1998-07 Issue:7 Volume:45 Page:1385-1392
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nishihori K.,Kitaura Y.,Hirose M.,Mihara M.,Nagaoka M.,Uchitomi N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/15071/00701466.pdf?arnumber=701466

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Carrier Confinement and Optical Properties of Two-dimensional Electrons in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN Heterostructures;Journal of the Korean Vacuum Society;2008-07-30

2. Device linearity improvement of In0.49Ga0.51P/In0.15Ga0.85As doped-channel FETs with a metal plug alloy process;Semiconductor Science and Technology;2008-02-07

3. Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs;IEICE Transactions on Electronics;2007-08-01

4. High performance GaAs MESFETs with molecular implanted and optimized lowly-doped drain structure for maximized speed, gain and breakdown performance;Solid-State Electronics;2005-12

5. A high performance RF LDMOSFET in thin film SOI technology with step drift profile;Solid-State Electronics;2003-11

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