Effect of Carrier Confinement and Optical Properties of Two-dimensional Electrons in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN Heterostructures
Author:
Publisher
The Korean Vacuum Society
Subject
Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)
Link
http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO200827651801860.pdf
Reference15 articles.
1. A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers
2. Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors
3. A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic
4. Measurements of Unity Gain Cutoff Frequency and Saturation Velocity of a GaN HEMT Transistor
5. InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers
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