Device linearity improvement of In0.49Ga0.51P/In0.15Ga0.85As doped-channel FETs with a metal plug alloy process-Reference-Cited by-同舟云学术

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Device linearity improvement of In0.49Ga0.51P/In0.15Ga0.85As doped-channel FETs with a metal plug alloy process

Published:2008-02-07 Issue:3 Volume:23 Page:035009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chien Feng-Tso,Liao Chien-Nan,Yin Jin-Mu,Chiu Hsien-Chin,Tsai Yao-Tsung

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

2. Improvement of third-order intermodulation product of RF and microwave amplifiers by injection

3. Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructures

4. Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs

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1. New Type of Heterostructures for Powerful pHEMT Transistors;Optoelectronics, Instrumentation and Data Processing;2020-09

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