A 0.2 V 32-Kb 10T SRAM With 41 nW Standby Power for IoT Applications
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8919/8402068/08267499.pdf?arnumber=8267499
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultra8T: A sub-threshold 8T SRAM with leakage detection;Integration;2024-09
2. Deep-Learning-Based Pre-Layout Parasitic Capacitance Prediction on SRAM Designs;Proceedings of the Great Lakes Symposium on VLSI 2024;2024-06-12
3. Enhanced 11-Transistor SRAM Cell with Half Select Disturb-Free Operation for High Performance Systems;2024 3rd International Conference on Artificial Intelligence For Internet of Things (AIIoT);2024-05-03
4. A 1MHz 256kb Ultra Low Power Memory Macro for Biomedical Recording Applications in 22nm FD-SOI Using FECC to Enable Data Retention Down to 170mV Supply Voltage;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01
5. A capacitor-coupled stacked-based sense amplifier with enhanced offset tolerance for low power SRAM;IEICE Electronics Express;2023-12-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3