Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects-Reference-Cited by-同舟云学术

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Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

Published:2016-12 Issue:12 Volume:63 Page:2139-2148
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Abunahla Heba,Mohammad Baker,Homouz Dirar,Okelly Curtis J.

Funder

Khalifa University Internal Research Fund (KUIRF L2)

KUSTARKSRC and SEM equipment (JSM-7610 F, JEOL LTD., Japan)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/7755810/07740907.pdf?arnumber=7740907

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel memristor with Au/SnSe/ITO structure: First fabrication via a hydrothermal and sputtering approach;Journal of Alloys and Compounds;2024-08

2. Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride;Advanced Functional Materials;2023-04-20

3. Application of Island Thin Films for Microelectronics Devices;2023 5th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2023-03-16

4. Memristor-based PUF for lightweight cryptographic randomness;Scientific Reports;2022-05-23

5. Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning;Frontiers in Electronics;2022-03-25

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