A Broadband E-band Driver Amplifier in 0.1 μm GaAs pHEMT Technology
Author:
Affiliation:
1. School of Information Science and Engineering, Southeast University,State Key Lab. of Millimeter Waves,Nanjing,China,210096
Funder
Natural Science Foundation of China (NSFC)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9977438/9977447/09977451.pdf?arnumber=9977451
Reference7 articles.
1. A 71-80 GHz medium power amplifier using 4-mil 0.15-?m GaAs-PHEMT technology;tsai;Asia-Pacific Microwave Conference,0
2. A 24-GHz High-Isolation CMOS On–Off Keying Modulator With Reduced Input Impedance Variation
3. A W-Band Balanced Power Amplifier in 0.1-μm GaAs PHEMT Process
4. A 78-93 GHz Power Amplifier with 19.6-dBm Psat and 12.8 % PAEpeak in 0.1-µm GaAs pHEMT for Radio Astronomical Receiver System
5. A Wideband W-Band Driver Amplifier in 0.1 μm GaAs Process
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1. A Low-Cost, E-Band Surface Mounted Packaged Power Amplifier MMIC;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
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