Author:
Wang Yu,Cui Jie,Zhang Renli
Cited by
3 articles.
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1. A Sub-1.4 dB Noise Figure 6-18 GHz Low Noise Amplifier Using 0.15 µm GaAs pHEMT Technology;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
2. A Ku-Band Low Noise Amplifier Implemented in 0.15 µm Gallium Arsenide pHEMT Process;2022 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2022-12-12
3. A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16