A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology
Author:
Affiliation:
1. RF Group,Baltic Institute of Advanced Technology,Vilnius,Lithuania
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051702.pdf?arnumber=10051702
Reference10 articles.
1. A GaAs MMIC LNA Design for Wideband Satellite Communication Receiver Application;wang;IEEE International Conference on Communication Problem Solving,2015
2. A C To Ku Band Ultra-wideband LNA With RLC-Feedback And T-matching Network
3. A 0-Level Packaged RF-MEMS Switched Wide-band GaAs LNA MMIC;gustafsson;2013 European Microwave Conference Nuremberg,2013
4. Thermally Activated Real-Space-Transfer Noise in Pseudomorphic High-Electron-Mobility Transistors;van die;J Appl Phys 74,1998
5. 10 to 40 GHz superheterodyne receiver frontend in 0.13 µm SiGe BiCMOS technology
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