Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications-Reference-Cited by-同舟云学术

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Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Memory Workshop (IMW)
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Author:

Kim Si Joon,Mohan Jaidah,Young Chadwin D.,Colombo Luigi,Kim Jiyoung,Summerfelt Scott R.,San Tamer

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8385224/8388765/08388832.pdf?arnumber=8388832

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding;IEEE Transactions on Electron Devices;2023-12

2. Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy;IEEE Transactions on Device and Materials Reliability;2023-09

3. Optimizing the Ferroelectric Properties of Hf_1–xZr_xO₂ Films via Crystal Orientation;ACS Applied Electronic Materials;2023-02-07

4. Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications;ACS Applied Electronic Materials;2023-02-07

5. Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃;IEEE Transactions on Electron Devices;2023-02

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