A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme-Reference-Cited by-同舟云学术

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A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme

Published:2013-06 Issue:6 Volume:48 Page:1511-1520
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Ohsawa Takashi,Koike Hiroki,Miura Sadahiko,Honjo Hiroaki,Kinoshita Keizo,Ikeda Shoji,Hanyu Takahiro,Ohno Hideo,Endoh Tetsuo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/6518166/06495490.pdf?arnumber=6495490

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