A 3T Gain Cell Embedded DRAM Utilizing Preferential Boosting for High Density and Low Power On-Die Caches
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/4/5772983/05763722.pdf?arnumber=5763722
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5. CSDB-eDRAM: A 16Kb Energy-Efficient 4T CSDB Gain Cell eDRAM with over 16.6s Retention Time and 49.23uW/Kb at 4.2K for Cryogenic Computing;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
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