InP-based DHBT technology for high-speed mixed signal and digital applications
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4957851/5012404/05012407.pdf?arnumber=5012407
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. mm-Wave noise modeling in advanced SiGe and InP HBTs;Journal of Computational Electronics;2015-02-13
2. High-Bitrate-Measurement-System-Oriented Lower-Jitter 113-Gbit/s 2:1 Multiplexer and 1:2 Demultiplexer Modules Using 1-µm InP/InGaAs/InP Double Heterojunction Bipolar Transistors;IEICE Transactions on Electronics;2013
3. High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs;IEEE Electron Device Letters;2011-08
4. InP DHBT-Based IC Technology for 100-Gb/s Ethernet;IEEE Transactions on Electron Devices;2011-08
5. A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology;IEEE Transactions on Microwave Theory and Techniques;2011-03
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