InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft

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InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz

Published:2007-05 Issue: Volume: Page:
ISSN:1092-8669
Container-title:2007 IEEE 19th International Conference on Indium Phosphide & Related Materials
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Author:

Feng M.,Snodgrass Williams

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4265862/4265863/04265965.pdf?arnumber=4265965

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution;Applied Physics Letters;2015-11-02

2. Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times;Japanese Journal of Applied Physics;2015-08-21

3. mm-Wave noise modeling in advanced SiGe and InP HBTs;Journal of Computational Electronics;2015-02-13

4. Metamorphosis of the transistor into a laser;EPL (Europhysics Letters);2014-12-29

5. The Transistor Laser: Theory and Experiment;Proceedings of the IEEE;2013-10

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