Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times

Author:

Kanaya Hidetoshi,Maekawa Takeru,Suzuki Safumi,Asada Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Conventional vs. Island THz Slot-Antenna Resonant-Tunneling-Diode Oscillators;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17

2. Island THz on-chip slot-antenna resonant-tunneling-diode oscillators;Applied Physics Letters;2023-07-24

3. Leveraging machine learning to harness non-parabolic effects in semiconductor heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2023-01

4. Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling Diodes;IEEE Transactions on Electron Devices;2022-08

5. In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band;2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS);2022-07-04

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