0.13-μm SiGe BiCMOS technology with More-than-Moore modules
Author:
Affiliation:
1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
2. Berlin Technical University, HFT4, Einsteinufer 25, 10587, Berlin, Germany
3. Fraunhofer Institute for Reliability and Microintegration Berlin, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8100804/8112898/08112912.pdf?arnumber=8112912
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tungsten grid enhanced thin-film wafer-level encapsulation for monolithically integrated D-Band RF-MEMS switches in a 130 nm BiCMOS technology;2022 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP);2022-07-11
2. Monolithic Integration of a Wafer-Level Thin-Film Encapsulated mm-Wave RF-MEMS Switch in BEOL of a 130-nm SiGe BiCMOS Technology;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-06
3. Panel‐Level Packaging for Heterogenous Integration;Embedded and Fan‐Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces;2021-12-03
4. BEOL modifications of a 130 nm SiGe BiCMOS technology for monolithic integration of thin-film wafer-level encapsulated D-Band RF-MEMS switches;2021 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP);2021-08-25
5. Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review;Molecules;2019-01-31
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