Tungsten grid enhanced thin-film wafer-level encapsulation for monolithically integrated D-Band RF-MEMS switches in a 130 nm BiCMOS technology-Reference-Cited by-同舟云学术

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Tungsten grid enhanced thin-film wafer-level encapsulation for monolithically integrated D-Band RF-MEMS switches in a 130 nm BiCMOS technology

Published:2022-07-11 Issue: Volume: Page:
ISSN:
Container-title:2022 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)
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Author:

Goritz Alexander¹,Wipf Selin Tolunay¹,Drost Martin¹,Wietstruck Matthias¹,Fraschke Mirko¹,Kruger Andreas¹,Lisker Marco¹

Affiliation:

1. IHP - Leibniz-Institut für Innovative Mikroelektronik,Frankfurt (Oder),Germany,15236

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9911657/9911709/09911719.pdf?arnumber=9911719

Reference11 articles.

1. 0.13-μm SiGe BiCMOS technology with More-than-Moore modules

2. MEMS for automotive and consumer electronics;finkbeiner;Proc IEEE European Solid-State Circuits Conf (ESSCIRC),2013

3. Thin films: Stresses and mechanical properties VI;townsend,1993

4. D–Band RF–MEMS SPDT Switch in a $0.13~\mu$ m SiGe BiCMOS Technology

5. BEOL modifications of a 130 nm SiGe BiCMOS technology for monolithic integration of thin-film wafer-level encapsulated D-Band RF-MEMS switches

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1. A Thin Film Porous Alumina Vacuum Package Utilizing a Pore Sealing Getter;Journal of Microelectromechanical Systems;2023-08

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