BEOL modifications of a 130 nm SiGe BiCMOS technology for monolithic integration of thin-film wafer-level encapsulated D-Band RF-MEMS switches-Reference-Cited by-同舟云学术

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BEOL modifications of a 130 nm SiGe BiCMOS technology for monolithic integration of thin-film wafer-level encapsulated D-Band RF-MEMS switches

Published:2021-08-25 Issue: Volume: Page:
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Container-title:2021 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP)
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Author:

Goritz Alexander,Wipf Selin Tolunay,Wietstruck Matthias,Kaynak Mehmet,Fraschke Mirko,Kruger Andreas,Lisker Marco

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9568657/9568494/09568672.pdf?arnumber=9568672

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methodology to Accurately Replicate a Non-Planar Thin-Film Microstrip BEOL in 3D EM Simulation;2024 IEEE Radio and Wireless Symposium (RWS);2024-01-21

2. Tungsten grid enhanced thin-film wafer-level encapsulation for monolithically integrated D-Band RF-MEMS switches in a 130 nm BiCMOS technology;2022 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP);2022-07-11

3. Monolithic Integration of a Wafer-Level Thin-Film Encapsulated mm-Wave RF-MEMS Switch in BEOL of a 130-nm SiGe BiCMOS Technology;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-06

4. Review and Perspectives of Micro/Nano Technologies as Key-Enablers of 6G;IEEE Access;2022

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