Drain leakage current characteristics due to the band-to-band tunneling in LDD MOS devices-Reference-Cited by-同舟云学术

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Drain leakage current characteristics due to the band-to-band tunneling in LDD MOS devices

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Container-title:International Technical Digest on Electron Devices Meeting
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Author:

Kurimoto K.,Odake Y.,Odanaka S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/794/2489/00074357.pdf?arnumber=74357

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