Dilemmas and Enigmas of Implantable IC Design
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-25448-7_4
Reference22 articles.
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3. Kurimoto K, Odake Y, Odanaka S (1989) Drain leakage current characteristics due to the band-to-band tunneling in LDD MOS devices. Technical Digest International Electron Devices Meeting (IEDM ‘89), 3–6 Dec, Washington, DC, pp 621–624
4. Riccò B, Gozzi G, Lanzoni M (1998) Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films. IEEE Trans Electron Devices 45(7):1554–1560
5. Pantisano L, Cheung KP (2001) Stress-induced leakage current (SILC) and oxide breakdown: Are they from the same oxide traps? IEEE Trans Device Mater Reliabil 1(2):109–112
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