A 200 x 256 Image Sensor Heterogeneously Integrating a 2D Nanomaterial-Based Photo-FET Array and CMOS Time-to-Digital Converters
Author:
Affiliation:
1. Harvard University,Cambridge,MA
2. Samsung Advanced Institute of Technology,Suwon,Korea
Funder
Samsung Advanced Institute of Technology
NSF
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731685.pdf?arnumber=9731685
Reference5 articles.
1. Broadband image sensor array based on graphene–CMOS integration
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5. Optoelectronic devices based on two-dimensional transition metal dichalcogenides
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