2.2 A 5G Mobile Gaming-Centric SoC with High-Performance Thermal Management in 4nm FinFET-Reference-Cited by-同舟云学术

2.2 A 5G Mobile Gaming-Centric SoC with High-Performance Thermal Management in 4nm FinFET

Published:2023-02-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Huang Bo-Jr¹,Tsai Alfred¹,Hsieh Lear¹,Chang Kathleen¹,Tsai C.-J.¹,Chen Jia-Ming¹,Fang Eric Jia-Wei¹,Hsueh Sung S.-Y.¹,Ciao Jack¹,Chen Barry¹,Chang Chuck¹,Kao Ping¹,Wang Ericbill¹,Chen Harry H.¹,Mair Hugh¹,Hwang Shih-Arn¹

Affiliation:

1. MediaTek,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067271.pdf?arnumber=10067271

Reference4 articles.

1. A 5nm 3.4GHz Tri-Gear ARMv9 CPU Subsystem in a Fully Integrated 5G Flagship Mobile SoC

2. Thread-Level Power Management for a Current-and Temperature-Limiting System in a 7nm Hexagon™ Processot;kalyanam;ISSCC,2021

3. 2.5 A 7nm FinFET 2.5GHz/2.0GHz Dual-Gear Octa-Core CPU Subsystem with Power/Performance Enhancements for a Fully Integrated 5G Smartphone SoC

4. An acta-Core 2.8/2GHz Dual-Gear Sensor-Assisted High-Speed and Power-Efficient CPU in 7nm FinFET 5G Smartphone SoC;huang;ISSCC,2021

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1. Temperature Dependence of Quasi–Ballistic Transport in n–Type and p–Type Nanosheets;2024 IEEE Latin American Electron Devices Conference (LAEDC);2024-05-08

2. Thermal Analysis of High-Performance Server SoCs from FinFET to Nanosheet Technologies;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. 14.4 A Fully Digital Current Sensor Offering Per-Core Runtime Power for System Budgeting in a 4nm-Plus Octa-Core CPU;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18

4. Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation;Semiconductor Science and Technology;2023-12-12