Abstract
Abstract
Artificial intelligence computing requires hardware like central processing units and graphic processing units for data processing. However, excessive heat generated during computations remains a challenge. The paper focuses on the heat issue in logic devices caused by transistor structures. To address the problem, the operational mechanism of the Junctionless Field-Effect Transistor (JLFET) is investigated. JLFET shows potential in mitigating heat-related issues and is compared to other nanosheet (ns) FETs. In the case of JL-nsFET, the change in mobility with increasing temperature is smaller compared to Con-nsFET, resulting in less susceptibility to lattice scattering and thermal resistance (Rth) in self-heating effect situation is 0.43 [K µW−1] for Con-nsFET and 0.414 [K µW−1] for JL-nsFET. The reason why the Rth of JL-nsFET is smaller than that of Con-nsFET is that JL-nsFET uses a source heat injection conduction mechanism and a large heat transfer area by using a bulk channel.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. 2.2 A 5G mobile gaming-centric SoC with high-performance thermal management in 4nm FinFET;Huang,2023
2. Short-channel effects in SOI MOSFETs;Veeraraghavan;IEEE Trans. Electron Devices,1989
3. The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects;Skotnicki;IEEE Electron Device Lett.,1988
4. Sub-25 nm FinFET with advanced fin formation and short channel effect engineering;Yamashita,2011
5. 3nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications;Bae,2018