On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept-Reference-Cited by-同舟云学术

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On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept

Published:2017-08 Issue:8 Volume:38 Page:1063-1066
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Antoniou Marina^ORCID,Lophitis Neophytos^ORCID,Udrea Florin^ORCID,Bauer Friedhelm,Vemulapati Umamaheswara Reddy,Badstuebner Uwe

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7990274/07955014.pdf?arnumber=7955014

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects;IEEE Transactions on Electron Devices;2024-01

3. Insulated Gate Bipolar Transistors with Deep Trench Technology for Low Loss Switching Application;2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom);2023-12-07

4. A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer;Micromachines;2023-03-12

5. 41% Reduction In Power Stage Area On Silicon-On-Insulator Bipolar-CMOS-DMOS-IGBT Platform With Newly Developed Multiple Deep-Oxide Trench Technology;2022 International Electron Devices Meeting (IEDM);2022-12-03

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