Affiliation:
1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 610031, China
2. Qianghua Times (Chengdu) Technology Co., Ltd., Chengdu 610031, China
Abstract
A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reverse conduction. By preventing electrons from leaking across the N+ region at the collector side, the extra electron-blocking (EB) layer introduced in the SJ-RC-IGBT can dramatically enhance electron–hole pairs in the N/P-pillars. Hence, the SJ-RC-IGBT demonstrates a low on-state voltage (Von). In addition, snapback-free characteristics and a large safe operating area (SOA) are also achieved in the SJ-RC-IGBT. During the turn-off process, a significant amount of electrons are extracted by parasitic MOS across the EB layer at the collector side to decrease the turn-off loss (Eoff). According to the optimized results, the SJ-RC-IGBT with EB layer obtains an ultralow Eoff of 3.9 mJ/cm2 at Von = 1.38 V with 88% and 81% decreases, respectively, compared with the conventional reverse-conducting IGBT (CRC-IGBT) and superjunction IGBT (SJ-IGBT).
Funder
National Natural Science Foundation of China
Science Technology Foundation of Sichuan
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference24 articles.
1. A 55-kW three-phase inverter with Si IGBTs and SiC schottky diodes;Ozpineci;IEEE Trans. Ind. Appl.,2009
2. Design of IGBT with integral freewheeling diode;Napoli;IEEE Electron. Device Lett.,2002
3. Takahashi, H., Yamamoto, A., Aono, S., and Minato, T. (2004, January 24–27). 1200V reverse conducting IGBT. Proceedings of the International Symposium on Power Semiconductor Devices ICs (ISPSD), Tokyo, Japan.
4. Simulation study of an injection enhanced insulated-gate bipolar transistor with p-base schottky contact;Jiang;IEEE Trans. Electron. Devices,2016
5. A carrier-storage-enhanced superjunction IGBT with ultralow loss and on-state voltage;Huang;Electron. Device Lett.,2018
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