Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure-Reference-Cited by-同舟云学术

Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

Published:2023-12-20 Issue:1 Volume:13 Page:23
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Zhang Peijian¹,Qiu Sheng²³,Zhu Kunfeng³⁴,Chen Wensuo⁴

Affiliation:

1. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

2. School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Sichuan Institute of Solid-State Circuits, Chongqing 400060, China

4. National Key Laboratory of Power Transmission Equipment Technology, School of Electrical Engineering, Chongqing University, Chongqing 400044, China

Abstract

In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the proposed RC-IGBT-CIE, which results in low reverse-conducting voltage (VF). The low reverse recovery loss and low turn-on loss using an inductive load circuit are obtained by using the modified carrier concentration profile resulted from both the CIE effect and the low-injection-efficiency p-emitter. Simulation results show that, with the same sum of turn-on loss and reverse recovery loss (Eon + Erec), when compared to conventional RC-IGBT with anti-parallel thyristor (RC-IGBT-thyristor), the RC-IGBT-CIE reduces VF by 9.2%, and meanwhile, with the same total conducting voltage (Von, sat + VF), the total switching loss (Eoff + Eon + Erec) is reduced by 20.9% but does not sacrifice short-circuit capability.

Funder

Project of Chongqing Natural Science Foundation

Science and Technology on Analog Integrated Circuit Laboratory Foundation Project, China

Fundamental Research Funds for the Central Universities

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/13/1/23/pdf

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