Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process-Reference-Cited by-同舟云学术

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Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Chatterjee A.,Chapman R.A.,Dixit G.,Kuehne J.,Hattangady S.,Yang H.,Brown G.A.,Aggarwal R.,Erdogan U.,He Q.,Hanratty M.,Rogers D.,Murtaza S.,Fang S.J.,Kraft R.,Rotondaro A.L.P.,Hu J.C.,Terry M.,Lee W.,Fernando C.,Konecni A.,Wells G.,Frystak D.,Bowen C.,Rodder M.,Chen I.-C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650507.pdf?arnumber=650507

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