Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process-Reference-Cited by-同舟云学术

Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process

Published:2016-03-22 Issue:4S Volume:55 Page:04EG09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Asami Yoshinobu,Kurata Motomu,Okazaki Yutaka,Higa Eiji,Matsubayashi Daisuke,Okamoto Satoru,Sasagawa Shinya,Moriwaka Tomoaki,Kakehata Tetsuya,Yakubo Yuto,Kato Kiyoshi,Hamada Takashi,Sakakura Masayuki,Hayakawa Masahiko,Yamazaki Shunpei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EG09/pdf

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2. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

3. Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

4. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

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