High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation-Reference-Cited by-同舟云学术

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High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation

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Container-title:International Electron Devices Meeting 1991 [Technical Digest]
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Author:

Kesan V.P.,Subbana S.,Restle P.J.,Tejwani M.J.,Aitken J.M.,Iyer S.S.,Ott J.A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/606/6055/00235432.pdf?arnumber=235432

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation scatterings in p-type Si1−xGexunder weak electric field;Nanotechnology;2015-11-16

2. Performance Enhancements in Scaled Strained-SiGe pMOSFETs With $ \hbox{HfSiO}_{x}/\hbox{TiSiN}$ Gate Stacks;IEEE Transactions on Electron Devices;2009-10

3. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs;Annual Review of Materials Research;2009-08-01

4. Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process;Solid-State Electronics;2007-06

5. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2005-01

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