An ECR MOCVD (Ba,Sr)TiO/sub 3/ based stacked capacitor technology with RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gbit-scale DRAMs-Reference-Cited by-同舟云学术

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An ECR MOCVD (Ba,Sr)TiO/sub 3/ based stacked capacitor technology with RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gbit-scale DRAMs

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Container-title:Proceedings of International Electron Devices Meeting
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Author:

Yamamichi S.,Lesaicherre P.-Y.,Yamaguchi H.,Takemura K.,Sone S.,Yabuta H.,Sato K.,Tamura T.,Nakajima K.,Ohnishi S.,Tokashiki K.,Hayashi Y.,Kato Y.,Miyasaka Y.,Yoshida M.,Ono H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3584/10696/00497196.pdf?arnumber=497196

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