Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application-Reference-Cited by-同舟云学术

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Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

Published: Issue: Volume: Page:
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Container-title:International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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Author:

Byoung Hun Lee ,Laegu Kang ,Wen-Jie Qi ,Renee Nieh ,Yongjoo Jeon ,Katsunori Onishi ,Lee J.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6669/17838/00823863.pdf?arnumber=823863

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