Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs-Reference-Cited by-同舟云学术

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Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs

Published: Issue: Volume: Page:
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Container-title:Proceedings of International Electron Devices Meeting
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Author:

Ohji Y.,Matsui Y.,Itoga T.,Hirayama M.,Sugawara Y.,Torii K.,Miki H.,Nakata M.,Asano I.,Iijima S.,Kawamoto Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3584/10696/00497194.pdf?arnumber=497194

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Effective SiO2Thickness and Low Leakage Current Ta2O5Capacitors Based on Tantalum Tetraethoxide Dimethylamino-Ethoxide Precursor;Japanese Journal of Applied Physics;2005-04-08

2. Properties of high-k/ultrahigh purity silicon nitride stacks;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07

3. Low Crystallization Temperature for Ta2O5Thin Films;Japanese Journal of Applied Physics;2003-11-10

4. Effects of N2O Plasma Annealing on the Characteristics of Tantalum Oxide Thin Films Deposited on TaN/Ta Electrode;Japanese Journal of Applied Physics;2002-12-15

5. Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent;Japanese Journal of Applied Physics;2002-03-15

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