High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/606/6055/00235407.pdf?arnumber=235407
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries;Japanese Journal of Applied Physics;2019-03-14
2. The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer;Scientific Reports;2017-09-07
3. Electrical Stress Effect on the Leakage Current of Metal-Induced Laterally Crystallized p-Channel Poly-Si TFTs;Journal of Nanoscience and Nanotechnology;2012-04-01
4. Gettering of Ni silicide to minimize the leakage current in metal-induced crystallized polycrystalline silicon thin-film transistors;Electronic Materials Letters;2012-04
5. High performance poly-Si thin film transistors fabricated by self-aligned seed induced lateral crystallization;Electronic Materials Letters;2011-12
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