DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries-Reference-Cited by-同舟云学术

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DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Published:2019-03-14 Issue:SB Volume:58 Page:SBBJ05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Bo-Yuan,Chen Kun-Ming,Shiao Yu-Shao Jerry,Lin Chuang-Ju,Huang Guo-Wei,Chen Hsiu-Chih,Hsueh Fu-Kuo,Shen Chang-Hong,Shieh Jia-Min,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBJ05/pdf

Reference31 articles.

1. Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass

2. Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

3. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

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