Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes-Reference-Cited by-同舟云学术

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Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes

Published:2022-01 Issue:1 Volume:69 Page:434-438
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Thoti Narasimhulu^ORCID,Li Yiming^ORCID,Sung Wen-Li

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9664642/09640241.pdf?arnumber=9640241

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Steep subthreshold swing Double - Gate tunnel FET using source pocket engineering: Design guidelines;Micro and Nanostructures;2024-11

2. A novel gate over source-channel overlap dual-gate TFET with insulator pocket and lateral source contact for optimizing subthreshold characteristic;Microelectronics Journal;2024-09

3. Performance and reliability assessment of source work function engineered charge plasma based Ti/HfO₂/Al₂O₃/Ge, double gate TFET;Engineering Research Express;2024-05-03

4. A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors;Microelectronics Journal;2024-03

5. A Novel Gate Over Source-Channel Overlap Dual-Gate Tfet with Insulator Pocket and Lateral Source Contact for Optimizing Subthreshold Characteristic;2024

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