A novel gate over source-channel overlap dual-gate TFET with insulator pocket and lateral source contact for optimizing subthreshold characteristic-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A novel gate over source-channel overlap dual-gate TFET with insulator pocket and lateral source contact for optimizing subthreshold characteristic

Published:2024-09 Issue: Volume:151 Page:106356
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Chen Qing^ORCID,Yang Lulu,Li Jianwei,Wang Dandan,Qi Zengwei,Yang Xiaofeng,Chen Dong,He Wei,Shang Shiguang

Publisher

Elsevier BV

Reference34 articles.

1. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron. Device Lett.,2007

2. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

3. Tunnel FETs for ultra-low voltage digital VLSI circuits: part II–evaluation at circuit level and design perspectives;Alioto;IEEE Trans. Very Large Scale Integr. Syst.,2014

4. 3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications[C]//2016 Design;Gupta,2016

5. A novel ultra-low-power gate overlap tunnel FET (GOTFET) dynamic adder;Vidhyadharan;Int. J. Electron.,2020

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP