Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET-Reference-Cited by-同舟云学术

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET

Published:2021-09 Issue:9 Volume:68 Page:4391-4396
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Higashi Y.^ORCID,Ronchi N.^ORCID,Kaczer B.^ORCID,Alam Md Nur K.^ORCID,O'Sullivan B. J.^ORCID,Banerjee K.,McMitchell S. R. C.^ORCID,Breuil L.,Walke A.,Van den Bosch G.^ORCID,Linten D.,Van Houdt J.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9520090/09493749.pdf?arnumber=9493749

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