Polarization-Induced Temperature Instability of HfO<sub>2</sub>-Based Ferroelectric FET-Reference-Cited by-同舟云学术

Polarization-Induced Temperature Instability of HfO₂-Based Ferroelectric FET

Published:2024-01 Issue:1 Volume:45 Page:32-35
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jin Chengji¹^ORCID,Xu Jiacheng¹,Gu Jiani¹^ORCID,Chen Jiajia¹^ORCID,Zhang Hongrui¹,Liu Huan¹,Qian Haoji¹,Chen Bing²^ORCID,Cheng Ran³^ORCID,Liu Yan⁴^ORCID,Yu Xiao¹^ORCID,Han Genquan²^ORCID

Affiliation:

1. Zhejiang Laboratory, Research Center for Intelligent Chips and Devices, Hangzhou, China

2. Hangzhou Institute of Technology, Xidian University, Hangzhou, China

3. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

4. School of Microelectronics, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

Zhejiang Province Key Research and Development Programs

Zhejiang Provincial Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10376160/10318152.pdf?arnumber=10318152

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3. Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

4. Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications

5. BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update