Modification of OFF- and ON-Resistances of SrTiO<sub> <i>x</i> </sub> WORM Memories by Thermal Annealing Processes-Reference-Cited by-同舟云学术

Modification of OFF- and ON-Resistances of SrTiO_x WORM Memories by Thermal Annealing Processes

Published:2022-03 Issue:3 Volume:69 Page:1020-1027
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsu Chih-Chieh¹^ORCID,Cheng Chao-Wen¹,Jhang Wun-Ciang¹,Wen Siu-Ming¹

Affiliation:

1. Graduate School of Engineering Science and Technology and the Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, Taiwan

Funder

Ministry of Science and Technology of Taiwan, R.O.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09680694.pdf?arnumber=9680694

Reference39 articles.

1. Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

2. Role of Ti Electrode on the Electrical Characterization of Filament within Al2O3Based Antifuse

3. Phototunable Biomemory Based on Light-Mediated Charge Trap

4. Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

5. Enhancement of Resistive Switching Characteristics of Sol–Gel TiO x RRAM Using Ag Conductive Bridges

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