Radiation Hardness Study of L G = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation-Reference-Cited by-同舟云学术

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Radiation Hardness Study of L G = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation

Published:2021-05 Issue:5 Volume:68 Page:2289-2294
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Elwailly Adam^ORCID,Saltin Johan,Gadlage Matthew J.^ORCID,Wong Hiu Yung^ORCID

Funder

Department of Defense (DoD) [Naval Surface Warfare Center (NSWC) Crane]

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9410657/9388931-aam.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Type of Si-Based MOSFET for Radiation Reinforcement;Micromachines;2024-01-31

2. Optimization of DMGC CGAA FET Under Heavy Ion Irradiation Environment: A Reliability Analysis;2023 IEEE 20th India Council International Conference (INDICON);2023-12-14

3. A Comparative Analysis of FinFET and Nanosheet FET based Circuits with Geometrical Parameter Variations at sub-5 nm technology node;2023 IEEE 20th India Council International Conference (INDICON);2023-12-14

4. A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM Architectures;2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI);2023-08-28

5. Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor;Journal of Nanoparticle Research;2023-06-29

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