A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM Architectures-Reference-Cited by-同舟云学术

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A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM Architectures

Published:2023-08-28 Issue: Volume: Page:
ISSN:
Container-title:2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)
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Author:

Marques Cleiton M.¹,Brendler Leonardo H.²,Wrobel Frédéric¹,Zimpeck Alexandra L.³,Bartra Walter E. C.⁴,Butzen Paulo F.²,Meinhardt Cristina⁵

Affiliation:

1. Université de Montpellier, IES, UMR - CNRS5214,France

2. Universidade Federal do Rio Grande do Sul - UFRGS - PGMiero,Brazil

3. Universidade Católica de Pelotas - UCPel - Centro de Ciências Socials e Tecnológicas,Brazil

4. Pontificia Universidad Católica del Perú - PUCP,Peru

5. Universidade Federal de Santa Catarina - UFSC - PPGCC,Brazil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10261937/10261649/10261665.pdf?arnumber=10261665

Reference25 articles.

1. FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects

2. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies

3. Comparative Analysis of Various SRAM Cells with Low Power, High Read Stability and Low Area

4. Radiation Hardness Study of L G = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation

5. Soft Errors Sensitivity of SRAM Cells in Hold, Write, Read and Half-Selected Conditions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells;Electronics;2024-05-16

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