Soft Errors Sensitivity of SRAM Cells in Hold, Write, Read and Half-Selected Conditions-Reference-Cited by-同舟云学术

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Soft Errors Sensitivity of SRAM Cells in Hold, Write, Read and Half-Selected Conditions

Published:2021-04 Issue:2 Volume:37 Page:263-270
ISSN:0923-8174
Container-title:Journal of Electronic Testing
language:en
Short-container-title:J Electron Test

Author:

Marques Cleiton Magano^ORCID,Meinhardt Cristina,Butzen Paulo Francisco

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

https://link.springer.com/content/pdf/10.1007/s10836-021-05944-2.pdf

Reference23 articles.

1. Alorda B, Torrens G, Bota S, Segura J (2011) 8T vs. 6T SRAM cell radiation robustness: A comparative analysis. Proc Microelectron Reliab. 51(2):350–359. https://doi.org/10.1016/j.microrel.2010.09.002

2. Artola L, Hubert G, Alioto M (2014) Comparative soft error evaluation of layout cells in finFET technology. Proc Microelectron Reliab 54(9–10):2300–2305. https://doi.org/10.1016/j.microrel.2014.07.109

3. Asai S (2019) VLSI Design and Test for Systems Dependability. Springer. https://doi.org/10.1007/978-4-431-56594-9

4. ASU. Predictive technology model. Accessible in: http://ptm.asu.edu, last access: 5 Nov 2019

5. Calin T, Nicolaidis M, Velazco R (1996) Upset hardened memory design for submicron CMOS technology. Proc IEEE Trans Nucl Sci 43(6):2874–2878. https://doi.org/10.1109/23.556880

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation hardened 11T memory cell for space applications;Microprocessors and Microsystems;2023-10

2. A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM Architectures;2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI);2023-08-28

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