Silicon carbide power MOSFET technology-Reference-Cited by-同舟云学术

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Silicon carbide power MOSFET technology

Published:1997 Issue: Volume: Page:
ISSN:
Container-title:Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors
language:
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Author:

Casady J.B.,Agarwal A.K.,Rowland L.B.,Seshadri S.,Siergiej R.R.,Sheridan D.C.,Mani S.,Sanger P.A.,Brandt C.D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5669/15178/00711654.pdf?arnumber=711654

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Performance Study of Hybrid Si/SiC Insulated-Gate Bipolar Transistors;2022 IEEE 7th Forum on Research and Technologies for Society and Industry Innovation (RTSI);2022-08-24

2. Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents;Technology Analysis & Strategic Management;2022-07-28

3. New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives;IEEE Access;2022

4. Optimization of SiC UMOSFET Structure for Improvement of Breakdown Voltage and ON-Resistance;IEEE Transactions on Electron Devices;2018-02

5. Characterization of 4H-SiC gate turn-off thyristor;Solid-State Electronics;2000-02

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