Rapid Degradation of WSi Self-Aligned Gate GaAs MESFET by Hot Carrier Effect
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IEEE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reliability Studies in the Real World;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
2. High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study;Microelectronics Reliability;2002-01
3. Material Analysis on Degradation Phenomena Caused by Hot Carrier in 0.35 μm WSi Gate GaAs Heterostructure Insulated Gate Field Effect Transistors;Journal of The Electrochemical Society;2001
4. Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices;Journal of Crystal Growth;2000-03
5. Numerical Analysis of Hot-Electron Effects in GaAs MESFETs;Simulation of Semiconductor Devices and Processes;1995
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