Author:
Tkachenko Y. A.,Wei C. J.,Hwang J. C. M.,Hwang D. M.
Reference4 articles.
1. A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka and A. Tamura, “Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect”, in Proc. Int’l Reliability Physics Symp., 1992, pp. 127–130.
2. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. J. Wei, J. C. M. Hwang, L. Aucoin and S. Shanfield, “Accelerated dc screening of GaAs FETs for power slump tendency under RF overdrive, ”in Dig. US Conf. GaAs Manufacturing Technology, 1994, pp. 35–38.
3. Silvaco International, Santa Clara, CA.
4. D. M. Hwang, L. Dechiaro, M. C. Wang, P. S. D. Lin, C. E. Zah, S. Ovadia, T. P. Lee, D. Darby, Y. A. Tkachenko and J. C. M. Hwang, “High-voltage electron-beam-induced-current imaging of microdefects in laser diodes and MESFETs, ”in Proc. Int’l Reliability Phys. Symp., 1994, pp. 470–477.