High-k dielectrics and MOSFET characteristics-Reference-Cited by-同舟云学术

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High-k dielectrics and MOSFET characteristics

Published: Issue: Volume: Page:
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Container-title:IEEE International Electron Devices Meeting 2003
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Author:

Lee J.C.,Cho H.J.,Kang C.S.,Rhee S.,Kim Y.H.,Choi R.,Kang C.Y.,Choi C.,Abkar M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8960/28396/01269174.pdf?arnumber=1269174

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate Bias Effect of 28 nm-node HK/MG nMOSFETs with DPN Temperature Treatments;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

2. Gain Efficiency of 28 nm-node Various Channelwidth pMOSFETs under Nitrogen Concentration of DPN Treatment;2023 IEEE 3rd International Conference on Electronic Communications, Internet of Things and Big Data (ICEIB);2023-04-14

3. Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields;Crystals;2022-02-19

4. High-k Polymer Nanocomposite Materials for Technological Applications;Applied Sciences;2020-06-20

5. Textile-Based Electronic Components for Energy Applications: Principles, Problems, and Perspective;Nanomaterials;2015-09-07

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